Light Emitting Device

ABSTRACT

A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.

This application is a continuation of co-pending application Ser. No.13/049,683, filed on Mar. 16, 2011, which is a continuation ofapplication Ser. No. 12/175,332, filed on Jul. 17, 2008, now U.S. Pat.No. 7,928,449, and claims priority under 35 U.S.C. §119 of Korean PatentApplication No. 10-2007-0073253, filed on Jul. 23, 2007. The entirecontents of all of the above applications are hereby incorporated byreference.

BACKGROUND

The present disclosure relates to a light emitting device and amanufacturing method thereof.

A light emitting diode (LED) is widely used as a light emitting device.

The LED includes an N-type semiconductor layer, an active layer, and aP-type semiconductor layer stacked therein. Light is generated from theactive layer and emitted to the outside when power is applied.

SUMMARY

Embodiments provide a light emitting device and a manufacturing methodthereof.

Embodiments also provide a light emitting device with an improvedelectrical insulation characteristic, and a manufacturing methodthereof.

In an embodiment, a light emitting device comprises: a second metallayer; a second conduction type semiconductor layer on the second metallayer; an active layer on the second conduction type semiconductorlayer; a first conduction type semiconductor layer on the active layer;a first metal layer on the first conduction type semiconductor layer; aninsulating layer being disposed on a peripheral portion of an uppersurface of the second metal layer and being disposed under a lowersurface of the second conduction type semiconductor layer; and apassivation layer on lateral surfaces of the insulating layer, thesecond conduction type semiconductor layer, the active layer and thefirst conduction type semiconductor layer, the passivation layer beingon an upper surface of the second metal layer, wherein the insulatinglayer is disposed between the second metal layer and the secondconduction type semiconductor layer at the peripheral portion of theupper surface of the second metal layer, wherein the upper surface ofthe second metal layer contacts to the lower surface of the secondconduction type semiconductor layer at a central portion of the uppersurface of the second metal layer, and wherein a lateral surface of theinsulating layer is adjacent to a lateral surface of the second metallayer.

In an embodiment, a light emitting device comprises: a second metallayer including a plurality of layers; a second conduction typesemiconductor layer on the second metal layer; an active layer on thesecond conduction type semiconductor layer; a first conduction typesemiconductor layer on the active layer; a first metal layer on thefirst conduction type semiconductor layer; an insulating layer beingdisposed on a peripheral portion of an upper surface of the second metallayer, and being disposed under a lower surface of the second conductiontype semiconductor layer, and a passivation layer on lateral surfaces ofthe insulating layer, the second conduction type semiconductor layer,the active layer and the first conductive type semiconductor layer, thepassivation layer being on an upper surface of the second metal layer,wherein the insulating layer is disposed between the second metal layerand the second conduction type semiconductor layer at the peripheralportion of the upper surface of the second metal layer, wherein alateral surface of the insulating layer is adjacent to a lateral surfaceof the second metal layer, and wherein an upper surface of the firstconduction type semiconductor layer comprises an uneven surface.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view explaining a light emitting deviceaccording to a first embodiment.

FIGS. 2 to 6 are views explaining a method for manufacturing a lightemitting device according to a first embodiment.

FIG. 7 is a view of a second conduction type semiconductor layer wherean insulating layer is formed as viewed from the upper side in a lightemitting device according to a first embodiment.

FIG. 8 is a cross-sectional view explaining a light emitting deviceaccording to a second embodiment.

FIGS. 9 to 19 are views explaining a method for manufacturing a lightemitting device according to a second embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, a light emitting device and a manufacturing method thereofaccording to embodiments are described in detail with reference to theaccompanying drawings.

In the following description, it will be understood that when a layer(or film) is referred to as being ‘on’ another layer or substrate, itcan be directly on the another layer or substrate, or intervening layersmay also be present. Further, it will be understood that when a layer isreferred to as being ‘under’ another layer, it can be directly under theanother layer, and one or more intervening layers may also be present.In addition, it will also be understood that when a layer is referred toas being ‘between’ two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present. Also,‘on’ and ‘under’ of each layer is judged using the drawings as areference.

Hereinafter, a light emitting device and a manufacturing method thereofaccording to embodiments are described in detail with reference to theaccompanying drawings.

Embodiment 1

FIG. 1 is a cross-sectional view explaining a light emitting deviceaccording to a first embodiment.

Referring to FIG. 1, a light emitting device includes: a secondelectrode layer 40; a second conduction type semiconductor layer 16 onthe second electrode layer 40; an active layer 15 on the secondconduction type semiconductor layer 16; a first conduction typesemiconductor layer 14 on the active layer 15; and a first electrodelayer 22 on the first conduction type semiconductor layer 14.

Also, the second electrode layer 40 may include a metal layer 21, areflective layer 20 formed on the metal layer 21, and an ohmic contactlayer 19 formed on the reflective layer 20.

The metal layer 21 can be formed of at least one of Ti, Cr, Ni, Al, Pt,Au, W, and a conductive substrate. The reflective layer 20 can be formedof metal including at lease one of Ag, Al, Cu, and Ni having high lightreflectivity. The ohmic contact layer 19 can be a transparent electrodelayer, and for example, can be formed of at least one of indium tinoxide (ITO), ZnO, RuO_(x), TiO_(x), and IrO_(x).

Also, an insulating layer 18 is formed between the second electrodelayer 40 and the second conduction type semiconductor layer 16 along thelateral surface of the light emitting device. The insulating layer 18contacts the upper surface and the lateral surface of the secondelectrode layer 40, and contacts the lower surface of the secondconduction type semiconductor layer 16. The insulating layer 18 can be anitride layer in the group III having a thickness of 0.5-10 μm. Forexample, the insulating layer 18 can be an Al_(x)Ga_(1-x)N layer(0<x≦1).

The central portion of the metal layer 21 protrudes to the direction inwhich the second conduction type semiconductor layer 16 is disposed. Thecentral portions of the reflective layer 20 and the ohmic contact layer19 also protrude to the direction in which the second conduction typesemiconductor layer 16 is disposed.

Therefore, portions of the metal layer 21 and the reflective layer 20are disposed on the same horizontal plane, and portions of the metallayer 21 and the ohmic contact layer 19 are disposed on the samehorizontal plane.

Also, portions of the metal layer 21 and the insulating layer 18 can bedisposed on the same horizontal plane. Portions of the metal layer 21,the reflective layer 20, the ohmic contact layer 19, and the insulatinglayer 18 can be disposed on the same horizontal plane.

The upper surface of the first conduction type semiconductor layer 14 isnot formed to have a uniform height but has an uneven surface includingconvex portions and concave portions.

In the light emitting device according to the first embodiment, theinsulating layer 18 is formed between the second conduction typesemiconductor layer 16 and the second electrode layer 40, so that thefirst conduction type semiconductor layer 14 or the first electrodelayer 22 is spaced further from the second electrode layer 40.

Therefore, short-circuit between the first conduction type semiconductorlayer 14 or the first electrode layer 22 and the second electrode layer40 by an external foreign substance can be prevented.

That is, since the second conduction type semiconductor layer 16 isformed to have a very thin thickness, short-circuit between the firstconduction type semiconductor layer 14 and the second electrode layer40, or between the first electrode layer 22 and the second electrodelayer 40 may occur. The light emitting device according to the firstembodiment can prevent the short-circuit through the insulating layer18.

Particularly, in the light emitting device according to the firstembodiment, the insulating layer 18 can be a nitride layer and thenitride layer can be formed with a thick thickness, so thatshort-circuit is effectively prevented.

FIGS. 2 to 6 are views explaining a method for manufacturing a lightemitting device according to the first embodiment.

Referring to FIG. 2, a substrate 11, a buffer layer 12, an un-doped GaNlayer 13, a first conduction type semiconductor layer 14, an activelayer 15, and a second conduction type semiconductor layer 16 aresequentially formed.

Also, a mask layer 17 is formed on positions spaced from peripheralportions on the second conduction type semiconductor layer 16. Forexample, the mask layer 17 can be formed of SiO₂ or SiN.

Referring to FIG. 3, an insulating layer 18 is deposited on the secondconduction type semiconductor layer 16 on which the mask layer 17 isformed.

The insulating layer 18 can be a nitride layer in the group III. Forexample, the insulating layer 18 can be an Al_(x)Ga_(1-x)N layer(0<x≦1).

At this point, the insulating layer 18 does not grow at the centralportion where the mask layer 17 is formed, but grows on only theperipheral portions of the second conduction type semiconductor layer 16where the mask layer 17 is not formed.

The insulating layer 18 can be grown by flowing tri methyl gallium(TMGa) gas and trimethyl aluminum (TMAl) gas together with a hydrogengas and an ammonia gas into a chamber at temperature of 600-1200° C.

The insulating layer 18 has an insulation characteristic with a carrierconcentration of 6×10¹⁵-3×10¹⁷/cm³. At this point, the resistance of theinsulating layer 18 is greater than that of heat-treated secondconduction type semiconductor layer 16.

Since the insulating layer 18 is formed using a nitride layer in thelight emitting device according to the first embodiment, the insulatinglayer 18 having a thickness of 0.5-10 μm can be formed. Also, since theinsulating layer 18 is formed using the nitride layer, it can be formedby a general MOCVD equipment.

Referring to FIG. 4, the mask layer 17 is removed. Therefore, only theinsulating layer 18 remains on the second conduction type semiconductorlayer 16.

FIG. 7 is a view of a second conduction type semiconductor layer wherean insulating layer is formed as viewed from the upper side.

Referring to FIG. 7, the insulating layer 18 is formed along theperipheral portion of the second conduction type semiconductor layer 16,and the second conduction type semiconductor layer 16 is exposed throughthe central portion.

Referring to FIG. 5, a second electrode layer 40 is formed on theinsulating layer 18 and the second conduction type semiconductor layer16.

The second electrode layer 40 can be formed by sequentially depositingan ohmic contact layer 19, a reflective layer 20, and a metal layer 21.

Referring to FIG. 6, the substrate 11, the buffer layer 12, and theun-doped GaN layer 13 are removed. The substrate 11, the buffer layer12, and the un-doped GaN layer 13 can be removed by a laser or anetching process.

As the substrate 11, the buffer layer 12, and the un-doped GaN layer 13are removed, the first conduction type semiconductor layer 14 isexposed, and the upper surface of the first conduction typesemiconductor layer 14 is selectively etched such that it has an unevensurface.

Processing the upper surface of the first conduction type semiconductorlayer 14 such that it has an uneven surface is intended for allowinglight from the active layer 15 to be efficiently emitted.

Also, a first electrode layer 22 is formed on the first conduction typesemiconductor layer 14.

Though not shown in detail, the first electrode layer 22 can include anohmic contact layer.

As described above, the light emitting device according to the firstembodiment provides the insulating layer 18 between the second electrodelayer 40 and the second conduction type semiconductor layer 16 along theouter lateral surface of the light emitting device, thereby improvingthe electrical characteristic of the light emitting device.

Embodiment 2

FIG. 8 is a cross-sectional view explaining a light emitting deviceaccording to a second embodiment.

Referring to FIG. 8, a light emitting device includes: a secondelectrode layer 40; a second conduction type semiconductor layer 16 onthe second electrode layer 40; an active layer 15 on the secondconduction type semiconductor layer 16; a first conduction typesemiconductor layer 14 on the active layer 15; and a first electrodelayer 50 on the first conduction type semiconductor layer 14.

Also, the second electrode layer 40 can include a metal layer 21, and areflective layer 20 and an ohmic contact layer 19 formed on the metallayer 21.

The metal layer 21 can be formed of at least one of Ti, Cr, Ni, Al, Pt,Au, W, and a conductive substrate. The reflective layer 20 can be formedof metal including at lease one of Ag, Al, Cu, and Ni having high lightreflectivity. The ohmic contact layer 19 can be a transparent electrodelayer, and for example, can be formed of at least one of indium tinoxide (ITO), ZnO, RuO_(x), TiO_(x), and IrO_(x).

The first electrode layer 50 can include an ohmic contact layer 25, aseed layer 23 formed on the ohmic contact layer 25, and a metal layer 24formed on the seed layer 23.

The ohmic contact layer 25 can be a transparent electrode layer, and forexample, can be formed of at least one of indium tin oxide (ITO), ZnO,RuO_(x), TiO_(x), and IrO_(x).

Also, the insulating layer 18 is formed between the second electrodelayer 40 and the second conduction type semiconductor layer 16 along thelateral surface of the light emitting device. The insulating layer 18can be a nitride layer in the group III having a thickness of 0.5-10 μm.For example, the insulating layer 18 can be an Al_(x)Ga_(1-x)N layer(0<x≦1).

The central portion of the metal layer 21 protrudes to the direction inwhich the second conduction type semiconductor layer 16 is disposed. Thecentral portions of the reflective layer 20 and the ohmic contact layer19 also protrude to the direction in which the second conduction typesemiconductor layer 16 is disposed.

The upper surface of the first conduction type semiconductor layer 14,and the lower surface of the second conduction type semiconductor layer16 are not formed to have a uniform height. They have an uneven surfaceincluding convex portions and concave portions.

Also, a passivation layer 30 is formed on the lateral surfaces of thelight emitting device.

The passivation layer 30 can be formed of at least one of SiO₂, SiN,Al₂O₃, SU₈, SiON, SiCN, and a nitride in the group III.

Therefore, portions of the metal layer 21 and the reflective layer 20are disposed on the same horizontal plane. Portions of the metal layer21 and the ohmic contact layer 19 are disposed on the same horizontalplane. Also, portions of the metal layer 21 and the passivation layer 30are disposed on the same horizontal plane.

Also, portions of the metal layer 21, the insulating layer 18, and thepassivation layer 30 can be disposed on the same horizontal plane.Portions of the metal layer 21, the reflective layer 20, the ohmiccontact layer 19, the insulating layer 18, and the passivation layer 30can be disposed on the same horizontal plane.

In the light emitting device according to the second embodiment, theinsulating layer 18 is formed between the second conduction typesemiconductor layer 16 and the second electrode layer 40, so that thefirst conduction type semiconductor layer 14 or the first electrodelayer 50 is spaced further from the second electrode layer 40.

Therefore, short-circuit between the first conduction type semiconductorlayer 14 or the first electrode layer 50 and the second electrode layer40 by an external foreign substance can be prevented.

That is, since the second conduction type semiconductor layer 16 isformed to have a very thin thickness, short-circuit between the firstconduction type semiconductor layer 14 and the second electrode layer40, or between the first electrode layer 50 and the second electrodelayer 40 may occur. The light emitting device according to theembodiment can prevent the short-circuit through the insulating layer18.

Particularly, in the light emitting device according to the embodiment,the insulating layer 18 can be a nitride layer and the nitride layer canbe formed with a thick thickness, so that short-circuit is effectivelyprevented.

Also, the passivation layer 30 is formed on the outer surfaces of thelight emitting device according to the second embodiment, so thatshort-circuit between the first conduction type semiconductor layer 14and the second electrode layer 40, or between the first electrode layer50 and the second electrode layer 40 by an external foreign substancecan be prevented.

FIGS. 9 to 19 are views explaining a method for manufacturing a lightemitting device according to the second embodiment.

In description of the method for manufacturing the light emitting deviceaccording to the embodiment, manufacturing two light emitting devices onone substrate is exemplarily shown for easy understanding of a processof forming the passivation layer 30.

Referring to FIG. 9, a substrate 11, a buffer layer 12, an un-doped GaNlayer 13, a first conduction type semiconductor layer 14, an activelayer 15, and a second conduction type semiconductor layer 16 aresequentially formed.

Referring to FIG. 10, the upper surface of the second conduction typesemiconductor layer 16 is selectively etched to form an uneven surfaceincluding convex portions and concave portions. At this point, a dryingor wet etching process can be used as the etching process.

Referring to FIG. 11, a mask layer 17 is formed on positions spaced fromperipheral portions on the second conduction type semiconductor layer16. The mask layer 17 can be formed of SiO₂ or SiN.

Referring to FIG. 12, an insulating layer 18 is deposited on the secondconduction type semiconductor layer 16 on which the mask layer 17 isformed.

The insulating layer 18 can be a nitride layer in the group III. Forexample, the insulating layer 18 can be an Al_(x)Ga_(1-x)N layer(0<x≦1).

At this point, the insulating layer 18 does not grow at the centralportion where the mask layer 17 is formed, but grows on only theperipheral portions of the second conduction type semiconductor layer 16where the mask layer 17 is not formed.

The insulating layer 18 can be grown by flowing tri methyl gallium(TMGa) gas and trimethyl aluminum (TMAl) gas together with a hydrogengas and an ammonia gas into a chamber at temperature of 600-1200° C.

The insulating layer 18 has an insulation characteristic with a carrierconcentration of 6×10¹⁵-3×10¹⁷/cm³. At this point, the resistance of theinsulating layer 18 is greater than that of heat-treated secondconduction type semiconductor layer 16.

Since the insulating layer 18 is formed using a nitride layer in thelight emitting device according to the second embodiment, the insulatinglayer 18 having a thickness of 0.5-10 μm can be formed.

Also, since the insulating layer 18 is formed using the nitride layer,it can be formed by a general MOCVD equipment.

Referring to FIG. 13, the mask layer 17 is removed. Therefore, only theinsulating layer 18 remains on the second conduction type semiconductorlayer 16.

Also, an ohmic contact layer 19 is formed on the second conduction typesemiconductor layer 16 and the insulating layer 18.

Referring to FIG. 14, a passivation layer 30 is formed on the lateralsurfaces of the light emitting device.

Referring to FIG. 15, a reflective layer 20 and a metal layer 21 areformed on the passivation layer 30 and the ohmic contact layer 19, sothat a second electrode layer 40 is formed.

Referring to FIG. 16, the substrate 11, the buffer layer 12, and theun-doped GaN layer 13 are removed.

The substrate 11, the buffer layer 12, and the un-doped GaN layer 13 canbe removed by a laser or an etching process.

As the substrate 11, the buffer layer 12, and the un-doped GaN layer 13are removed, the first conduction type semiconductor layer 14 and thepassivation layer 30 are exposed.

Referring to FIG. 17, the upper surface of the first conduction typesemiconductor layer 14 is selectively etched such that it has an unevensurface.

Processing the upper surface of the first conduction type semiconductorlayer 14 such that it has an uneven surface is intended for allowinglight from the active layer 15 to be efficiently emitted.

Referring to FIG. 18, a first electrode layer 50 is formed on the firstconduction type semiconductor layer 14.

The first electrode layer 50 can include an ohmic contact layer 25, aseed layer 23, and a metal layer 24.

Referring to FIG. 19, the two light emitting devices shown in FIG. 18are separated into individual light emitting devices. FIG. 19illustrates one light emitting device separated.

As described above, the light emitting device according to theembodiment provides the insulating layer 18 between the second electrodelayer 40 and the second conduction type semiconductor layer 16 along theouter lateral surface of the light emitting device, thereby improvingthe electrical characteristic of the light emitting device.

Also, the light emitting device according to the embodiment provides thepassivation layer 30 on the lateral sides of the light emitting device,thereby improving the electrical insulation characteristic of the lightemitting device.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a secondmetal layer; a second semiconductor layer on the second metal layer; anactive layer on the second semiconductor layer; a first semiconductorlayer on the active layer; a first metal layer on the firstsemiconductor layer; an insulating layer between the second metal layerand the second semiconductor layer at a peripheral portion of an uppersurface of the second metal layer; and a passivation layer surroundinglateral surfaces of the insulating layer, the second semiconductorlayer, the active layer, and the first semiconductor layer, thepassivation layer being on the second metal layer, wherein the uppersurface of the second metal layer contacts to a lower surface of thesecond semiconductor layer at a central portion of the upper surface ofthe second metal layer, wherein a lateral surface of the insulatinglayer is adjacent to a lateral surface of the second metal layer, andwherein a lowermost surface of the passivation layer is disposed lowerthan a lowermost surface of the insulating layer.
 2. The light emittingdevice according to claim 1, wherein the insulating layer and thepassivation layer are formed of nitride layer.
 3. The light emittingdevice according to claim 1, wherein the insulating layer and thepassivation layer are formed of a different material.
 4. The lightemitting device according to claim 1, wherein a lower surface of thesecond metal layer has a flat shape, and the central portion of theupper surface of the second metal layer has a shape protruding to adirection in which the second semiconductor layer is disposed.
 5. Thelight emitting device according to claim 1, wherein the passivationlayer is formed of at least one selected from the group consisting ofSiO₂, SiN, Al₂O₃, SU₈, SiON, SiCN, and a nitride in the group III. 6.The light emitting device according to claim 1, wherein at least onelateral surface of the second metal layer and at least one lateralsurface of the passivation layer are disposed on the same plane.
 7. Thelight emitting device according to claim 1, wherein the second metallayer comprises an ohmic contact layer and a reflective layer.
 8. Thelight emitting device according to claim 1, wherein the second metallayer comprises at least one of Ti, Cr, Ni, Al, Pt, Au, W, Ag, Cu, ITO,ZnO, RuOx, TiOx, or IrOx.
 9. A light emitting device comprising: asecond metal layer including a plurality of layers; a secondsemiconductor layer on the second metal layer; an active layer on thesecond semiconductor layer; a first semiconductor layer on the activelayer; a first metal layer on the first semiconductor layer; aninsulating layer between the second metal layer and the secondsemiconductor layer at a peripheral portion of an upper surface of thesecond metal layer; and a passivation layer surrounding lateral surfacesof the insulating layer, the second semiconductor layer, the activelayer and the first semiconductor layer, the passivation layer being onthe second metal layer, wherein a lateral surface of the insulatinglayer is adjacent to a lateral surface of the second metal layer,wherein an upper surface of the first semiconductor layer comprises anuneven surface, and wherein a lowermost surface of the passivation layeris disposed lower than a lowermost surface of the insulating layer. 10.The light emitting device according to claim 9, wherein a portion of thepassivation layer contacts an upper portion of the first semiconductorlayer.
 11. The light emitting device according to claim 9, wherein thesecond metal layer comprises an ohmic contact layer and a reflectivelayer.
 12. The light emitting device according to claim 9, wherein theupper surface of the second metal layer contacts to the lower surface ofthe second semiconductor layer at a central portion of the upper surfaceof the second metal layer.
 13. The light emitting device according toclaim 9, a lower surface of the first metal layer comprises an unevensurface corresponding to a portion of the uneven surface of the firstsemiconductor layer.
 14. The light emitting device according to claim 9,wherein the insulating layer and the passivation layer are formed ofnitride layer.
 15. The light emitting device according to claim 9,wherein the insulating layer and the passivation layer are formed of adifferent material.
 16. The light emitting device according to claim 9,wherein a lower surface of the second metal layer has a flat shape, anda central portion of the upper surface of the second metal layer has ashape protruding to a direction in which the second semiconductor layeris disposed.
 17. The light emitting device according to claim 9, whereinthe passivation layer is formed of at least one selected from the groupconsisting of SiO₂, SiN, Al₂O₃, SU₈, SiON, SiCN, and a nitride in thegroup III.
 18. The light emitting device according to claim 9, whereinat least one lateral surface of the second metal layer and at least onelateral surface of the passivation layer are disposed on the same plane.19. The light emitting device according to claim 9, wherein the secondmetal layer comprises at least one of Ti, Cr, Ni, Al, Pt, Au, W, Ag, Cu,ITO, ZnO, RuOx, TiOx, or IrOx.
 20. The light emitting device accordingto claim 9, wherein the insulating layer comprises a nitride layer inthe group III.